Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy

S. Gwo, A. R. Smith, and C. K. Shih


J. Vac. Sci. Technol. A 11, 1644 (1993); doi:10.1116/1.578472 (5 pages)

Copyright (1993) American Vacuum Society. This article may be downloaded for personal use only.
Any other use requires prior permission of the author and the American Vacuum Society.

The following article appeared in S. Gwo et al., J. Vac. Sci. Technol. A 11, 1644 (1993)
and may be found at https://doi.org/10.1116/1.578472.

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